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electronic state造句

"electronic state"是什么意思  
造句与例句手机版
  • We have concentrated on the ground electronic states of diatomic molecules .
    我们曾主要集中注意双原子分子的电子基态。
  • Electronic states d contact charging of polymers
    辐照效应改变聚合物表面静电特性之研究
  • The study methods of electronic states in correlated disordered materials
    关联无序材料中电子态的研究方法
  • The electronic states in one - dimensional disordered system with long - range correlations
    一维长程关联无序系统中的电子态
  • Studying on density of electronic states and half - metallic property of v - and cr - coded cdse ferromagnetic semiconductors
    铁磁半导体的电子能态密度和半金属性质研究
  • We theoretically study the low temperature electronic states of a quantum wire irradiated under a transversely polarized coherent external electromagnetic field
    摘要从理论上研究了在横向极化的外电磁场辐照下量子线的电子态。
  • That ' s the holy grail in this field - - connecting our growing knowledge of the electronic states of dna with the photoproducts that damage it , " he said
    他解释到这一点将是增加了解dna的电子状态和破坏他的光产物之间关系的重要突破口。
  • Self - assembled semiconductor quantum dots are widely used in fabrications of nano - electronic devices , since they have few defects , mature growth technology and electronic state density of 6 function
    自组装半导体量子点由于缺陷少、生长技术成熟和具有函数形式的能态密度等优点而被广泛用于纳米电子器件制备中。
  • The measuring of low - temperature specific heat is an important and effective method to study the structure of electronic states , the atomic vibration of lattice , phase transition and structure of grain boundary
    低温比热测量是研究固体的电子能态结构、原子点阵振动状态、相变、界面结构等信息的重要的且很有效的手段之一。
  • For the effects of dimension and surface , the lattice structure , chemical states and the electronic states in the film surface ( interface ) have greatly affected the properties of the films and the practical applies in industries
    由于纳米材料的小尺寸效应及表面效应,薄膜表(界)面的晶格结构、化学形态和电子态成为决定薄膜性能的重要因素,而这些因素又直接影响着钛酸钡系薄膜的实际应用。
  • It's difficult to see electronic state in a sentence. 用electronic state造句挺难的
  • In chapter 3 , after introducing the curvature - modified electronic structures of single - wall carbon nanotubes , we study the density of electronic states . the relations between the electronic structures and tube - diameters and chiralities are discussed
    第三章介绍了考虑卷曲效应后的单壁碳纳米管的电子能级结构,并在此基础上研究了单壁碳纳米管的电子态密度,以及管径和螺旋度对其电子结构的影响。
  • Its principle can be outlined as follows : the accelerator produces a beam of fast ions which directs through the foil , because of collisions with the foil atoms the fast ions may undergo further ionization , and they often emerge from the foil in excited electronic states
    其原理如下:加速器产生的高能离子束与碳箔相碰撞而失去电子,同时剩余电子被激发到高激发态,在随后的退激过程中发射谱线,通过研究这些谱线可以得到原子的能级结构。
  • In this thesis , we study the density of electronic states of single - wall carbon nanotubes . the effects of tube - diameters and chiralities on the electronic structures are discussed by means of the analytical expression of band structures of single - wall carbon nanotubes under the consideration of curvature effects
    本文中,我们通过考虑卷曲效应后的单壁碳纳米管解析的能级结构表达式,研究了单壁碳纳米管的电子态密度,以及管径和螺旋度对其电子结构的影响。
  • Quantum confinement effects of semiconductor nanocrystals cdsaiseo9 in glass abstract a series of cds0 . iseo . 9 semiconductor nanocrystals embedded in silicate glass with different sizes have been fabricated by one - step and two - step annealing methods . the electronic state and optical properties of these nanocrystals also have been studied through room - temperature absorption spectra and electroabsorption spectra
    本文用一步退火和两步退火方法在玻璃基体中生长了一系列不同尺寸的cds _ ( 0 . 1 ) se _ ( 0 . 9 )半导体纳米晶体。对制备的纳晶样品作了室温吸收光谱和电调制吸收光谱的测量,以此研究了纳晶的电子结构及光学性质。
  • The photoelectric property of a - si : h films is closely associated with hydrogen content in films . on the one hand , hydrogen incorporated as monohydride ( si - h ) saturates dangling bonds in films , and on the other hand , hydrogen incorporated as polyhydride ( si - h2 , si - h3 , ( si - h2 ) n ) introduces defect in films and thus increases the density of localized electronic states in band gap
    A - si : h薄膜的光电特性同膜中的氢存在密切关系,一方面,氢以单氢化合物( si - h )方式结合到膜中,从而饱和了膜中的悬挂键;另一方面,氢以多氢化合物( si - h2 、 si - h3和( si - h2 ) n )方式结合到膜中,反而在膜中引入了缺陷,使带隙中的局域态密度增大。
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